Deep level transient spectroscopy measurement on tin-doped n-indium selenide
Identifieur interne : 000389 ( Main/Exploration ); précédent : 000388; suivant : 000390Deep level transient spectroscopy measurement on tin-doped n-indium selenide
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Abstract
Deep level transient spectroscopy measurements in indium selenide samples doped with different amounts of tin are reported. Three tin-related electron traps have been detected with activation energies for emission of 56, 74, and 110 meV. The capture cross-section has also been measured and it is very low and weakly dependent on temperature for the 74 and 110 meV deep levels that are attributed to electron trap states related to ionized acceptor centers. For the 56 meV level the apparent capture cross-section shows an activated temperature dependence with an activation energy of 35 meV, which yields an ionization energy of 21 meV for the related level, which corresponds to the tin-related shallow donor. That behaviour is interpreted through the presence in InSe of stacking-fault-related barriers. When one of these barriers is swept by the depletion zone edge during the emptying or filling pulses, electrons must overcome that barrier in order to be emitted or captured, which results in a reduction of the effective capture and emission rates of shallow donors which thus become observable through capacitance transients.
DOI: 10.1007/BF00323649
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Casanovas</name><affiliation wicri:level="1"><mods:affiliation>Department de Termodinàmica, Facultat de Física, E-46100, Burjassot (València), Spain</mods:affiliation><country xml:lang="fr">Espagne</country><wicri:regionArea>Department de Termodinàmica, Facultat de Física, E-46100, Burjassot (València)</wicri:regionArea><wicri:noRegion>Burjassot (València)</wicri:noRegion></affiliation></author><author><name>A. Chevy</name><affiliation wicri:level="3"><mods:affiliation>Laboratoire de Physique des Milieux Condensés, 4 Place Jussieu, Tour, 13, F-75005, Paris, France</mods:affiliation><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire de Physique des Milieux Condensés, 4 Place Jussieu, Tour, 13, F-75005, Paris</wicri:regionArea><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Paris</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:339_1991_Article_BF00323649.pdf</idno><date when="1991">1991</date><idno type="doi">10.1007/BF00323649</idno><idno type="wicri:Area/Main/Corpus">000575</idno><idno type="wicri:Area/Main/Curation">000575</idno><idno type="wicri:Area/Main/Exploration">000389</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>71.55</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Deep level transient spectroscopy measurements in indium selenide samples doped with different amounts of tin are reported. Three tin-related electron traps have been detected with activation energies for emission of 56, 74, and 110 meV. The capture cross-section has also been measured and it is very low and weakly dependent on temperature for the 74 and 110 meV deep levels that are attributed to electron trap states related to ionized acceptor centers. For the 56 meV level the apparent capture cross-section shows an activated temperature dependence with an activation energy of 35 meV, which yields an ionization energy of 21 meV for the related level, which corresponds to the tin-related shallow donor. That behaviour is interpreted through the presence in InSe of stacking-fault-related barriers. When one of these barriers is swept by the depletion zone edge during the emptying or filling pulses, electrons must overcome that barrier in order to be emitted or captured, which results in a reduction of the effective capture and emission rates of shallow donors which thus become observable through capacitance transients.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="63ee8dec6f09984855eff5b7f96030df269e2117"><titleInfo lang="eng"><title>Deep level transient spectroscopy measurement on tin-doped n-indium selenide</title></titleInfo><name type="personal"><namePart type="given">B.</namePart><namePart type="family">Marí</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department de Física Aplicada, Universitat Politècnica de València, E-46071, València, Spain</affiliation></name><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Segura</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department de Físcia Aplicada, Facultat de Física, E-46100, Burjassot (València), Spain</affiliation></name><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Casanovas</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department de Termodinàmica, Facultat de Física, E-46100, Burjassot (València), Spain</affiliation></name><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Chevy</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Laboratoire de Physique des Milieux Condensés, 4 Place Jussieu, Tour, 13, F-75005, Paris, France</affiliation></name><typeOfResource>text</typeOfResource><genre>Solids And Materials</genre><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, Berlin/Heidelberg</publisher><dateCreated encoding="w3cdtf">1990-11-15</dateCreated><dateCaptured encoding="w3cdtf">1991-01-17</dateCaptured><dateValid encoding="w3cdtf">2004-08-27</dateValid><copyrightDate encoding="w3cdtf">1991</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Deep level transient spectroscopy measurements in indium selenide samples doped with different amounts of tin are reported. Three tin-related electron traps have been detected with activation energies for emission of 56, 74, and 110 meV. The capture cross-section has also been measured and it is very low and weakly dependent on temperature for the 74 and 110 meV deep levels that are attributed to electron trap states related to ionized acceptor centers. For the 56 meV level the apparent capture cross-section shows an activated temperature dependence with an activation energy of 35 meV, which yields an ionization energy of 21 meV for the related level, which corresponds to the tin-related shallow donor. That behaviour is interpreted through the presence in InSe of stacking-fault-related barriers. When one of these barriers is swept by the depletion zone edge during the emptying or filling pulses, electrons must overcome that barrier in order to be emitted or captured, which results in a reduction of the effective capture and emission rates of shallow donors which thus become observable through capacitance transients.</abstract><subject lang="eng"><genre>PACS</genre><topic>71.55</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>Appl. Phys. A</title></titleInfo><titleInfo><title>Applied Physics A</title><subTitle>Materials Science and Processing</subTitle><partNumber>Year: 1991</partNumber><partNumber>Volume: 52</partNumber><partNumber>Number: 6</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1991-06-01</dateIssued><copyrightDate encoding="w3cdtf">1991</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Condensed Matter and Material Sciences</topic><topic>Surfaces and Interfaces, Thin Films</topic><topic>Semiconductors</topic><topic>Micro- and Nanosystems</topic><topic>Materials Processing, Characterization, and Design</topic><topic>Operating Procedures, Materials Treatment</topic></subject><identifier type="issn">0947-8396</identifier><identifier type="issn">Electronic: 1432-0630</identifier><identifier type="matrixNumber">339</identifier><identifier type="local">IssueArticleCount: 12</identifier><recordInfo><recordOrigin>Springer-Verlag, 1991</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00323649</identifier><identifier type="matrixNumber">Art4</identifier><identifier type="local">BF00323649</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>373</start><end>379</end></extent></part><recordInfo><recordOrigin>Springer-Verlag, 1991</recordOrigin><recordIdentifier>339_1991_Article_BF00323649.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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